features ? integrated 600v half-bridge gate driver ? 15.6v zener clamp on vcc ? true micropower start up ? tighter initial deadtime control ? low temperature coefficient deadtime ? shutdown feature (1/6th vcc) on c t pin ? increased undervoltage lockout hysteresis (1v) ? lower power level-shifting circuit ? constant lo, ho pulse widths at startup ? lower di/dt gate driver for better noise immunity ? low side output in phase with r t ? internal 50nsec (typ.) bootstrap diode (ir21531d) ? excellent latch immunity on all inputs and outputs ? esd protection on all leads ? also available lead-free preliminary data sheet no. pd60131 revm self-oscillating half-bridge driver product summary v offset 600v max. duty cycle 50% t r /t p 80/40ns v clamp 15.6v deadtime (typ.) 0.6 s typical connections ir21531(d)(s) & (pbf) description the ir21531(d)(s) are an improved version of the popular ir2155 and ir2151 gate driver ics, and in- corporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard cmos 555 timer. the ir21531 provides more functionality and is easier to use than previous ics. a shutdown feature has been designed into the c t pin, so that both gate driver outputs can be disabled us ing a low voltage control signal. in addition, the gate driver output pulse widths are the same once the ris ing undervoltage lockout threshold on v cc has been reached, resulting in a more stable profile of fre quency vs time at startup. noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by increasing the undervoltage lockout hysteresis to 1v . finally, special attention has been payed to maximizing the latch immunity of the device, and providing comprehensive esd protection on all pins. ir21531(d) ir21531(s) vb ho vs lo vcc rt ct com 600v max shutdown vb ho vs lo vcc rt ct com 600v max shutdown www.irf.com 1 packages 8 lead pdip 8 lead soic
ir21531(d)(s) & (pbf) 2 www.irf.com note 1: this ic contains a zener clamp structure between the chip v cc and com which has a nominal breakdown voltage of 15.6v. please note that this supply pin should not be driven by a dc, low impedance power source greater than the v clamp specified in the electrical characteristics section. note 2: care should be taken to avoid output switching conditions where the v s node flies inductively below ground by more than 5v. note 3: enough current should be supplied to the v cc pin of the ic to keep the internal 15.6v zener diode clamping the voltage at this pin. recommended operating conditions for proper operation the device should be used within the recommended conditions. symbol definition min. max. units v bs high side floating supply voltage v cc - 0.7 v clamp v s steady state high side floating supply offset voltage -3.0 (note 2) 600 v cc supply voltage 10 v clamp i cc supply current (note 3) 5 ma t j junction temperature -40 125 c v absolute maximum ratings absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. all voltage param- eters are absolute voltages referenced to com, all currents are defined positive into any lead. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. symbol definition min. max. units v b high side floating supply voltage -0.3 625 v s high side floating supply offset voltage v b - 25 v b + 0.3 v ho high side floating output voltage v s - 0.3 v b + 0.3 v lo low side output voltage -0.3 v cc + 0.3 v rt r t pin voltage -0.3 v cc + 0.3 v ct c t pin voltage -0.3 v cc + 0.3 i cc supply current (note 1) 25 i rt r t pin current -5 5 dv s /dt allowable offset voltage slew rate -50 50 v/ns p d maximum power dissipation @ t a +25 c (8 lead dip) 1.0 (8 lead soic) 0.625 rth ja thermal resistance, junction to ambient (8 lead dip) 125 (8 lead soic) 200 t j junction temperature -55 150 t s storage temperature -55 150 c t l lead temperature (soldering, 10 seconds) 300 v c/w w ma
ir21531(d)(s) & (pbf) www.irf.com 3 symbol component min. max. units r t timing resistor value 10 k ? c t c t pin capacitor value 330 pf recommended component values ir2153 rt vs frequency 10 100 1000 10000 100000 1000000 10 100 1000 10000 100000 1000000 rt (ohms) frequency (hz) 330pf 470pf 1nf 2.2nf 4.7nf 10nf ct values ir21531 rt vs frequency
ir21531(d)(s) & (pbf) 4 www.irf.com floating supply characteristics electrical characteristics v bias (v cc , v bs ) = 12v, c l = 1000 pf, c t = 1 nf and t a = 25 c unless otherwise specified. the v in , v th and i in parameters are referenced to com. the v o and i o parameters are referenced to com and are applicable to the respective output leads: ho or lo. symbol definition min. typ. max. units test conditions v ccuv+ rising v cc undervoltage lockout threshold 8.1 9.0 9.9 v ccuv- falling v cc undervoltage lockout threshold 7.2 8.0 8.8 v ccuvh v cc undervoltage lockout hysteresis 0.5 1.0 1.5 i qccuv micropower startup v cc supply current 75 150 v cc v ccuv - i qcc quiescent v cc supply current 500 950 v clamp v cc zener clamp voltage 14.4 15.6 16.8 v i cc = 5ma low voltage supply characteristics v a symbol definition min. typ. max. units test conditions f osc oscillator frequency 19.4 20 20.6 r t = 36.9k ? 94 100 106 r t = 7.43k ? d r t pin duty cycle 48 50 52 % fo < 100khz i ct c t pin current 0.001 1.0 ua i ctuv uv-mode c t pin pull down current 0.30 0.70 1.2 ma v cc = 7v v ct+ upper c t ramp voltage threshold 8.0 v ct- lower c t ramp voltage threshold 4.0 v ctsd c t voltage shutdown threshold 1.8 2.1 2.4 v rt+ high-level r t output voltage, v cc - v rt 10 50 i rt = 100 a 100 300 i rt = 1ma v rt- low-level r t output voltage 10 50 i rt = 100 a 100 300 i rt = 1ma v rtuv uv-mode r t output voltage 0 100 v cc v ccuv - v rtsd sd-mode r t output voltage, v cc - v rt 10 50 i rt = 100 a, v ct = 0v 10 300 i rt = 1ma, v ct = 0v oscillator i/o characteristics v mv symbol definition min. typ. max. units test conditions i qbsuv micropower startup v bs supply current 0 10 v cc v ccuv - i qbs quiescent vbs supply current 30 50 v bsmin minimum required v bs voltage for proper 4.0 5.0 v v cc =v ccuv+ + 0.1v functionality from r t to ho i lk offset supply leakage current 50 av b = v s = 600v v f bootstrap diode forward voltage (i r21531d) 0.5 1.0 v i f = 250ma a khz
ir21531(d)(s) & (pbf) www.irf.com 5 lead assignments 8 lead dip 8 lead soic ir21531(d) i r21531s note: the ir21531d is offered in 8 lead dip only. symbol description v cc logic and internal gate drive supply voltage r t oscillator timing resistor input c t oscillator timing capacitor input com ic power and signal ground lo low side gate driver output v s high voltage floating supply return ho high side gate driver output v b high side gate driver floating supply lead definitions symbol definition min. typ. max. units test conditions v oh high level output voltage, v bias -v o 0 100 i o = oa vol low-level output voltage, vo 0 100 i o = oa vol_uv uv-m ode output voltage, vo 0 100 i o = oa v cc v ccuv - t r output rise time 80 150 t f output fall time 45 100 t sd shutdown propogation delay 660 t d output deadtime (ho or lo) 0.35 0.60 0.85 sec gate driver output characteristics mv nsec electrical characteristics (cont.)
ir21531(d)(s) & (pbf) 6 www.irf.com functional block diagram for ir21531(s) functional block diagram for ir21531d v b pulse gen delay hv level shift v cc pulse filter dead time lo v s com r s q 15.6v c t r t uv detect r q s q dead time ho logic - - - + + + r r r/2 r/2 d1 note: the d1 is a separate die. v b pulse gen delay hv level shift v cc pulse filter dead time lo v s com r s q 15.6v c t r t uv detect r q s q dead time ho logic - - - + + + r r r/2 r/2
ir21531(d)(s) & (pbf) www.irf.com 7 8 lead soic 01-0021 08 8 lead pdip 01-3003 01
ir21531(d)(s) & (pbf) 8 www.irf.com figure 1. input/output timing diagram figure 3. deadtime waveform definitions lo r t c t vcc vccuv+ v clamp r t ,c t 1/3 2/3 ho td td figure 2. switching time waveform definitions (ho) (lo)
ir21531(d)(s) & (pbf) www.irf.com 9 leadfree part marking information order information lead free released non-lead free released part number date code irxxxxxx yww? ?xxxx pin 1 identifier ir logo lot code (prod mode - 4 digit spn code) assembly site code per scop 200-002 p ? marking code basic part (non-lead free) 8-lead pdip ir21531 order ir21531 8-lead soic ir21531s order ir21531s 8-lead pdip ir21531d order ir21531d leadfree part 8-lead pdip ir21531 order IR21531PBF 8-lead soic ir21531s order ir21531spbf 8-lead pdip ir21531d order ir21531dpbf ir world headquarters: 233 kansas st., el segundo, california 90245 tel: (310) 252-7105 this product has been qualified per industrial level data and specifications subject to change without notice. 9/20/2005
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